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TSM7N65
650V N-Channel Power MOSFET
ITO-220 TO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
650
RDS(on)()
1.2 @ VGS =10V
ID (A)
3
General Description
The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Features
Low RDS(ON) 1.2 (Max.) Low gate charge typical @ 32nC (Typ.) Low Crss typical @ 25pF (Typ.) Fast Switching
Block Diagram
Ordering Information
Part No.
TSM7N65CZ C0 TSM7N65CI C0
Package
TO-220 ITO-220
Packing
50pcs / Tube 50pcs / Tube N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Maximum Power Dissipation @ Tc = 25oC Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature TO-220 ITO-220 Ta = 25C Ta = 100C
Symbol
VDS VGS ID IDM EAS IAR PD TJ TSTG
Limit
650 30 6.4 3.8 22 216 6 125 30 150 -55 to +150
Unit
V V A A A mJ A W C
o
C
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TSM7N65
650V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t 10sec TO-220 ITO-220
Symbol
RJC RJA
Limit
1.0 4.2 62.5
Unit
o
C/W C/W
o
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transfer Conductance Diode Forward Voltage Dynamic
b
Conditions
VGS = 0V, ID = 250uA VGS = 10V, ID = 3A VDS = VGS, ID = 250uA VDS = 650V, VGS = 0V VDS = 650V, VGS = 0V, TC=125C VGS = 20V, VDS = 0V VDS = 8V, ID = 1A IS = 6A, VGS = 0V
Symbol
BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on)
Min
650 -2.0 ------------------
Typ
-1.0 ----3.7 -32 6 11 905 115 25 14 14 47 19 638 4.8
Max
-1.2 4.0 1 50 10 -1.6 46 ------------
Unit
V V uA uA S V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = 300V, ID = 6A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 6A, dIF/dt = 100A/us VGS = 10V, ID = 6A, VDD = 300V, RG = 25
tr td(off) tf tfr
nS
nS uC
Reverse Recovery Charge Qfr Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=3.6A, L=30mH, VDS=500V 3. Pulse test: pulse width 300uS, duty cycle 2% 4. Essentially Independent of Operating Temperature
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650V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
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650V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage Threshold Voltage
Maximum Safe Operating Area - TO-220
Maximum Safe Operating Area - ITO-220
Normalized Thermal Transient Impedance, Junction-to-Ambient
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650V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
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650V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
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650V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
DIM A B C D E F G H I J K L M N O
ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) 1.40 (typ.) 0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262
Marking Diagram
Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
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Version: A09
TSM7N65
650V N-Channel Power MOSFET
TO-220 Mechanical Drawing
DIM A B C D E F G H J K L M N O P
TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270
Marking Diagram
Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
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650V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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